the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and spec ifying it in the "find what:" field. preliminary data sheet nesg210719 npn sige rf transistor for low noise, high-gain amplification 3-pin ultra super minimold (19, 1608 pkg) features ? the nesg210719 is an ideal choice for os c, low noise, high-gain amplification ? high breakdown voltage technology for sige tr. ? 3-pin ultra super minimold (19, 1608 pkg) ordering information part number order number package quantity supplying form nesg210719 nesg210719-a 50 pcs (non reel) nesg210719-t1 NESG210719-T1-A 3-pin ultra super minimold (19, 1608 pkg) (pb-free) 3 kpcs/reel ? 8 mm wide embossed taping ? pin 3 (collector) face the perforation side of the tape remark to order evaluation samples, please contact your nearby sales office. unit sample quantity is 50 pcs. absolute maximum ratings (t a = +25 c) parameter symbol ratings unit collector to base voltage v cbo 13.0 v collector to emitter voltage v ceo 5.5 v emitter to base voltage v ebo 1.5 v collector current i c 100 ma total power dissipation p tot note 200 mw junction temperature t j 150 c storage temperature t stg ? 65 to +150 c note mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pcb caution observe precautions when handling because these devic es are sensitive to el ectrostatic discharge. r09ds0051ej0400 rev.4.00 sep 24, 2012 r09ds0051ej0400 rev.4.00 page 1 of 8 sep 24, 2012
electrical characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 5 v, i e = 0 ? ? 100 na emitter cut-off current i ebo v eb = 0.5 v, i c = 0 ? ? 100 na dc current gain h fe note 1 v ce = 1 v, i c = 5 ma 140 180 220 ? rf characteristics gain bandwidth product (1) f t v ce = 1 v, i c = 5 ma, f = 2 ghz 7 10 ? ghz gain bandwidth product (2) f t v ce = 1 v, i c = 20 ma, f = 2 ghz ? 12 ? ghz insertion power gain (1) ? s 21e ? 2 v ce = 1 v, i c = 5 ma, f = 2 ghz 6.5 8 ? db insertion power gain (2) ? s 21e ? 2 v ce = 1 v, i c = 20 ma, f = 2 ghz ? 9 ? db noise figure nf v ce = 1 v, i c = 5 ma, f = 2 ghz, z s = z opt ? 0.9 1.5 db associated gain g a v ce = 1 v, i c = 5 ma, f = 2 ghz, z s = z opt 6 9 ? db reverse transfer capacitance c re note 2 v cb = 1 v, i e = 0, f = 1 mhz ? 0.5 0.7 pf notes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacit ance when the emitter grounded h fe classification rank fb/yfb marking d7 h fe value 140 to 220 nesg210719 r09ds0051ej0400 rev.4.00 page 2 of 8 sep 24, 2012
typical characteristics (t a = +25 c, unless otherwise specified) 300 250 150 100 50 0 25 50 75 100 125 150 0.7 0.3 0.1 024681012 0.6 0.4 0.2 f = 1 mhz 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 1 v 200 200 mw 0.5 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 2 v 100 80 60 40 20 02 1356 4 240 a 160 a 400 a 320 a 560 a 480 a 720 a 800 a i b = 80 a 640 a total power dissipation p tot (mw) total power dissipation vs. ambient temperature mounted on glass epoxy pcb (1.08 cm 2 1.0 mm (t) ) ambient temperature t a (?c) reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage base to emitter voltage v be (v) collector current i c (ma) collector current vs. base to emitter voltage base to emitter voltage v be (v) collector current i c (ma) collector current vs. base to emitter voltage collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage remark the graphs indicate nominal characteristics. nesg210719 r09ds0051ej0400 rev.4.00 page 3 of 8 sep 24, 2012
v ce = 1 v 1 000 100 10 0.1 1 10 100 v ce = 2 v 1 000 100 10 0.1 1 10 100 v ce = 3 v 1 000 100 10 0.1 1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current dc current gain h fe collector current i c (ma) dc current gain vs. collector current dc current gain h fe collector current i c (ma) dc current gain vs. collector current 20 18 16 14 12 10 8 6 4 2 0 1 10 100 v ce = 1 v f = 2 ghz 20 18 16 14 12 10 8 6 4 2 0 1 10 100 v ce = 2 v f = 2 ghz gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current remark the graphs indicate nominal characteristics. nesg210719 r09ds0051ej0400 rev.4.00 page 4 of 8 sep 24, 2012
35 25 20 15 10 5 0 30 v ce = 1 v i c = 5 ma 0.1 1 10 100 |s 21e | 2 35 25 20 15 10 5 0 30 v ce = 1 v i c = 20 ma 0.1 1 10 100 |s 21e | 2 35 25 20 15 10 5 0 30 v ce = 2 v i c = 5 ma 0.1 1 10 100 35 25 20 15 10 5 0 30 v ce = 2 v i c = 20 ma 0.1 1 10 100 |s 21e | 2 |s 21e | 2 frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) mag mag msg msg mag msg msg mag mag msg mag msg mag msg msg mag frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) remark the graphs indicate nominal characteristics. nesg210719 r09ds0051ej0400 rev.4.00 page 5 of 8 sep 24, 2012
25 20 15 10 5 0 1 10 100 v ce = 1 v f = 1 ghz |s 21e | 2 15 10 5 0 ? 5 1 10 100 v ce = 1 v f = 2 ghz |s 21e | 2 10 5 0 ? 5 1 10 100 v ce = 1 v f = 4 ghz |s 21e | 2 20 15 10 5 0 1 10 100 v ce = 2 v f = 1 ghz |s 21e | 2 20 15 10 5 0 1 10 100 v ce = 2 v f = 2 ghz |s 21e | 2 10 5 0 ? 5 1 10 100 v ce = 2 v f = 4 ghz |s 21e | 2 mag msg mag msg mag mag msg mag msg mag collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) remark the graphs indicate nominal characteristics. nesg210719 r09ds0051ej0400 rev.4.00 page 6 of 8 sep 24, 2012
s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/ nesg210719 r09ds0051ej0400 rev.4.00 page 7 of 8 sep 24, 2012
package dimensions 3-pin ultra super minimold (19, 1608 pkg) (unit: mm) 0.75?.05 0.6 0 to 0.1 0.15 +0.1 ?.05 1.6?.1 1.0 0.5 0.5 0.3 +0.1 ? 1.6?.1 0.8?.1 0.2 +0.1 ? 1 2 3 pin connections 1. emitter 2. base 3. collector d7 nesg210719 r09ds0051ej0400 rev.4.00 page 8 of 8 sep 24, 2012
revision history nesg210719 data sheet description rev. date page summary 0.01 oct 15, 2003 ? preliminary edition issued 1.00 oct 13, 2004 ? first edition issued 2.00 aug 23, 2005 ? second edition issued 3.00 jan 21, 2008 ? third edition issued 4.00 sep 24, 2012 throughout the co mpany name is changed to renesas electronics corporation. p.1 modification of features p.1 modification of ordering information p.1 modification of absolute maximum ratings p.2 modification of electrical characteristics p.2 modification of h fe classification p.7 modification of met hod for obtaining s-parameters all trademarks and registered tr ademarks are the property of their respective owners. c - 1
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat t o human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you mus t check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas e lectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance desig n. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics produc t, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measu res. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, in cluding without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this do cument, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by yo u or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. htt p ://www.renesas.co m refer to "htt p ://www.renesas.com/" for the latest and detailed information . california eastern laboratories , inc. 4590 patrick henr y drive, santa clara, california 95054, u.s.a . tel: +1-408-919-2500, fax: +1-408-988-0279 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-651-700, fax: +44-1628-651-804 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co. , ltd . 11f., samik lavied' or bld g ., 720-2 yeoksam-don g , kan g nam-ku, seoul 135-080, korea tel: +82-2-558-3737 , fax: +82-2-558-514 1 s ale s o ffi c e s ? 2012 renesas electronics corporation. all ri g hts reserved . [ colo p hon 2.2 ]
|
